2N4400 2N4400 is a general purpose purpose NPN NP N amplifi amplifier er transistor.įigure 1. (a) NPN transistor symbol, (b) PNP transistor symbol and (c) TO-92 package 2N4400 BJT pin configuration.īJTs are used to amplify current, using a small base current to control a large current between the collector collector and the the emitter.

Figure 1 shows the transistor symbol for the npn transistor, pnp transistor and a schematic of TO-92 package transistor, with the pin connections identified for the BJT 2N4400. Three terminals are emitter (E), collector (C) and base (B). BACKGROUND INFORMATION INFORMATION Bipolar junction transistors (BJTs) are three terminal devices that make up one of the fundamental building blocks of the silicon transistor technology. Theoret The oret ical backgro ba ckgroun und d of the BJT (Street man 7.1, 7.2, 7.2, 7.4, 7.5, 7.7.2, 7.7.2, 7.7.3) 7.7.3) Material Mate rialss necess nece ss ary for for this Experim Experiment ent : 1. Inform Information ess ential to yo ur unders tanding of this lab: 1. You need to determine base-to-collector DC current gain gain (hFE), Early voltage (V A ) and common-emitte common-emitterr breakdown brea kdown voltage voltage (BV CE0 ).

Then, you you will use use the LabView LabView program program BJT_ivcurve.vi to measure the I C V CE C CE characteristics of the BJT in forward active mode. OVERVIEW You need to first first ident ify the physical structure and a nd or or ientation of of BJT BJ T based base d on visu visuaa l – observation. OBJECTIVE In this lab, you will study the DC the DC characteristi characte ristics cs of a Bipol Bipolar ar Junction Junction Transi Tra nsistor stor (BJT). BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1.

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